Samsung Electronics and Broadcom have signed a memorandum of understanding to expand their collaboration across memory, semiconductor manufacturing and advanced packaging technologies for next-generation artificial intelligence infrastructure.
According to Samsung's official announcement, the planned cooperation is estimated to exceed $200 billion over the five-year period through 2030. The memory side will include high-bandwidth memory solutions for Broadcom's next-generation AI accelerators.
The foundry portion focuses on Samsung's 2-nanometer and smaller manufacturing processes for Broadcom products. The companies also plan to work on 2.3D and 2.5D advanced packaging methods intended to improve the performance and energy efficiency of AI and networking chips.
The announcement is a memorandum of understanding rather than a completed purchase contract. Its implementation, timeline and final commercial value will depend on the agreements and production plans the companies establish in the coming years.
